{"title":"用于弹道纳米级mosfet的新型通道材料-带结构效应","authors":"A. Rahman, Gerhard Klimeck, M. Lundstrom","doi":"10.1109/IEDM.2005.1609421","DOIUrl":null,"url":null,"abstract":"Performance limits of unstrained n- and p- MOSFETs with Si, Ge, GaAs and InAs channel materials are investigated using a 20 band sp3d5s*-SO semi-empirical atomistic tight-binding model and a top-of-the-barrier seminumerical ballistic transport model. It is observed that although the deeply scaled III-V devices offer very high electron injection velocities, their very low conduction band density-of-states strongly degrades their performance. Due to the high density-of-states for both electrons and holes in Ge, nanoscale devices with Ge as channel material are found to outperform all other materials considered","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"26 1","pages":"4 pp.-604"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"54","resultStr":"{\"title\":\"Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects\",\"authors\":\"A. Rahman, Gerhard Klimeck, M. Lundstrom\",\"doi\":\"10.1109/IEDM.2005.1609421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Performance limits of unstrained n- and p- MOSFETs with Si, Ge, GaAs and InAs channel materials are investigated using a 20 band sp3d5s*-SO semi-empirical atomistic tight-binding model and a top-of-the-barrier seminumerical ballistic transport model. It is observed that although the deeply scaled III-V devices offer very high electron injection velocities, their very low conduction band density-of-states strongly degrades their performance. Due to the high density-of-states for both electrons and holes in Ge, nanoscale devices with Ge as channel material are found to outperform all other materials considered\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"26 1\",\"pages\":\"4 pp.-604\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"54\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects
Performance limits of unstrained n- and p- MOSFETs with Si, Ge, GaAs and InAs channel materials are investigated using a 20 band sp3d5s*-SO semi-empirical atomistic tight-binding model and a top-of-the-barrier seminumerical ballistic transport model. It is observed that although the deeply scaled III-V devices offer very high electron injection velocities, their very low conduction band density-of-states strongly degrades their performance. Due to the high density-of-states for both electrons and holes in Ge, nanoscale devices with Ge as channel material are found to outperform all other materials considered