表征纳米线热电偶的器件结构

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243307

G. Szakmany, P. Krenz, A. Orlov, G. Bernstein, W. Porod

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引用次数: 0

摘要

为了证明这种方法的可行性，我们报告了钯金和钯铬纳米线(70纳米宽，50纳米厚)热电偶的塞贝克系数的测量。采用电子束光刻和电子束蒸发的方法，在640 nm的硅片上制备了热电偶、加热器和温度计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Device structure for the characterization of nanowire thermocouples

In order to demonstrate the feasibility of this approach, we report the measurements of the Seebeck coefficients of a palladium-gold and a palladium-chrome nanowire (70 nm wide and 50 nm thick) thermocouple. The thermocouple, heater, and thermometers were fabricated on top of 640 nm of thermally grown SiO2 on a silicon wafer using electron beam lithography and electron beam evaporation.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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