老化延迟监测中具有代表性的关键路径选择

F. Firouzi, Fangming Ye, K. Chakrabarty, M. Tahoori
{"title":"老化延迟监测中具有代表性的关键路径选择","authors":"F. Firouzi, Fangming Ye, K. Chakrabarty, M. Tahoori","doi":"10.1109/TEST.2013.6651924","DOIUrl":null,"url":null,"abstract":"Transistor aging degrades path delay over time and may eventually induce circuit failure due to timing variations. Therefore, in-field tracking of path delays is essential and to respond to this need, several delay sensor designs have been proposed in the literature. However, due to the significant overhead of these designs and the large number of critical paths in today's IC, it is infeasible to monitor the delay of every critical path in silicon. We present an aging-aware representative path-selection method that allows us to measure the delay of a small set of paths and infer the delay of a larger pool of paths that are likely to fail due to transistor aging. Moreover, since aging is affected by process variations and runtime variations in temperature and voltage, we use machine learning and linear algebra to incorporate these variations during representative path selection. Simulation results for benchmark circuits highlight the accuracy of the proposed approach for predicting critical path delay based on the selected representative paths.","PeriodicalId":6379,"journal":{"name":"2013 IEEE International Test Conference (ITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"40","resultStr":"{\"title\":\"Representative critical-path selection for aging-induced delay monitoring\",\"authors\":\"F. Firouzi, Fangming Ye, K. Chakrabarty, M. Tahoori\",\"doi\":\"10.1109/TEST.2013.6651924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transistor aging degrades path delay over time and may eventually induce circuit failure due to timing variations. Therefore, in-field tracking of path delays is essential and to respond to this need, several delay sensor designs have been proposed in the literature. However, due to the significant overhead of these designs and the large number of critical paths in today's IC, it is infeasible to monitor the delay of every critical path in silicon. We present an aging-aware representative path-selection method that allows us to measure the delay of a small set of paths and infer the delay of a larger pool of paths that are likely to fail due to transistor aging. Moreover, since aging is affected by process variations and runtime variations in temperature and voltage, we use machine learning and linear algebra to incorporate these variations during representative path selection. Simulation results for benchmark circuits highlight the accuracy of the proposed approach for predicting critical path delay based on the selected representative paths.\",\"PeriodicalId\":6379,\"journal\":{\"name\":\"2013 IEEE International Test Conference (ITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"40\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Test Conference (ITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TEST.2013.6651924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Test Conference (ITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2013.6651924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 40

摘要

随着时间的推移,晶体管老化降低了路径延迟,并可能最终引起电路故障,由于时间的变化。因此,现场跟踪路径延迟是必不可少的,为了满足这一需求,文献中提出了几种延迟传感器设计。然而,由于这些设计的巨大开销和当今IC中大量的关键路径,在硅中监控每个关键路径的延迟是不可行的。我们提出了一种具有老化意识的代表性路径选择方法,该方法允许我们测量一小组路径的延迟,并推断出可能由于晶体管老化而失效的更大路径池的延迟。此外,由于老化受到工艺变化和运行时温度和电压变化的影响,我们使用机器学习和线性代数在代表性路径选择中纳入这些变化。基准电路的仿真结果表明,基于所选代表性路径预测关键路径延迟的方法是准确的。
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Representative critical-path selection for aging-induced delay monitoring
Transistor aging degrades path delay over time and may eventually induce circuit failure due to timing variations. Therefore, in-field tracking of path delays is essential and to respond to this need, several delay sensor designs have been proposed in the literature. However, due to the significant overhead of these designs and the large number of critical paths in today's IC, it is infeasible to monitor the delay of every critical path in silicon. We present an aging-aware representative path-selection method that allows us to measure the delay of a small set of paths and infer the delay of a larger pool of paths that are likely to fail due to transistor aging. Moreover, since aging is affected by process variations and runtime variations in temperature and voltage, we use machine learning and linear algebra to incorporate these variations during representative path selection. Simulation results for benchmark circuits highlight the accuracy of the proposed approach for predicting critical path delay based on the selected representative paths.
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