{"title":"SiC/ sio2界面附近C=C缺陷的第一性原理研究:双键饱和缺陷钝化","authors":"N. Tajima","doi":"10.7567/SSDM.2017.PS-14-11","DOIUrl":null,"url":null,"abstract":"We performed first principles calculations to study the C=C defects near SiC/SiO2 interface, and demonstrated that the intra-gap defect levels could be removed by changing the C=C double bond to a C-C single bond.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"84 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A first principles study on the C=C defects near SiC/SiO 2 interface: Defect passivation by double bond saturation\",\"authors\":\"N. Tajima\",\"doi\":\"10.7567/SSDM.2017.PS-14-11\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We performed first principles calculations to study the C=C defects near SiC/SiO2 interface, and demonstrated that the intra-gap defect levels could be removed by changing the C=C double bond to a C-C single bond.\",\"PeriodicalId\":22504,\"journal\":{\"name\":\"The Japan Society of Applied Physics\",\"volume\":\"84 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Japan Society of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7567/SSDM.2017.PS-14-11\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.2017.PS-14-11","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A first principles study on the C=C defects near SiC/SiO 2 interface: Defect passivation by double bond saturation
We performed first principles calculations to study the C=C defects near SiC/SiO2 interface, and demonstrated that the intra-gap defect levels could be removed by changing the C=C double bond to a C-C single bond.
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