用于量子计算的硅CMOS器件建模

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870477

B. Venitucci, Jing Li, L. Bourdet, Y. Niquet

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引用次数: 3

摘要

我们回顾了硅自旋量子比特建模的最新成果。我们特别描述了我们为模拟这些器件而建立的方法，并给出了一些关于绝缘体上硅(SOI)量子比特的说明。我们特别讨论了电子和空穴自旋的电操纵。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling Silicon CMOS devices for quantum computing

We review our recent results on the modeling of silicon spin qubits. We describe, in particular, the methodology we have set-up for the simulation of these devices, and give some illustrations on silicon-on-insulator (SOI) qubits. We discuss, in particular, the electrical manipulation of electron and hole spins.

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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