G. Baccarani, E. Baravelli, E. Gnani, A. Gnudi, S. Reggiani
{"title":"纳米电子学的理论分析与建模","authors":"G. Baccarani, E. Baravelli, E. Gnani, A. Gnudi, S. Reggiani","doi":"10.1109/ESSDERC.2015.7324700","DOIUrl":null,"url":null,"abstract":"In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.","PeriodicalId":11845,"journal":{"name":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Theoretical analyses and modeling for nanoelectronics\",\"authors\":\"G. Baccarani, E. Baravelli, E. Gnani, A. Gnudi, S. Reggiani\",\"doi\":\"10.1109/ESSDERC.2015.7324700\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.\",\"PeriodicalId\":11845,\"journal\":{\"name\":\"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2015.7324700\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2015.7324700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Theoretical analyses and modeling for nanoelectronics
In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.
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