紧凑的高温封装与智能尺寸优化栅极驱动单元组装双ict

2012 IEEE Energy Conversion Congress and Exposition (ECCE) Pub Date : 2012-11-12 DOI:10.1109/ECCE.2012.6342784

T. Butschen, Zhan Wang, M. Kaymak, R. D. De Doncker

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引用次数: 2

摘要

本文的重点是介绍了一种创新的双栅整流晶闸管(dual - gct)的紧凑封装和小尺寸栅极驱动单元(GDU)。与内部整流晶闸管(ICT)[1]一样，该封装包括关断和导通单元，以实现快速导通(1000 A/μs)和关断(320 A/μs)切换。新的栅极驱动设计明显更小(与标准GDU相比减少了85%)，而且更简单。实现了Dual-GCT的耐温度(高达125°C)封装。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Compact high temperature package with smart size optimized gate drive unit for assembling the Dual-ICT

The focus of this paper is the presentation of an innovative realization of a compact package and a small-sized gate drive unit (GDU) for a dual gate commutated thyristor (Dual-GCT). The package includes, like in an internally commutated thyristor (ICT) [1], the turn-off but additionally the turn-on unit to achieve fast turn-on (1000 A/μs) and -off (320 A/μs) switching. The new gate drive design is significantly smaller (reduction of 85 % compared to a standard GDU) and less complex. A temperature-resistant (up to 125°C) package for a Dual-GCT is achieved.

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2012 IEEE Energy Conversion Congress and Exposition (ECCE)

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