取向和尺寸对栅极全方位矩形锗纳米线场效应管弹道电子输运特性的影响

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243360

S. Mori, N. Morioka, J. Suda, T. Kimoto

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引用次数: 0

摘要

我们通过紧结合模型计算了GeNW的导带结构，并获得了[001]、[110]、[111]和[112]中GeNW场效应管的电子传递特性的基本认识。弹道电子输运模拟表明[110]，(001)表面的GeNW场效应管具有高驱动电流和高注入速度，是n沟道场效应管的最佳选择。

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Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs

We calculated the conduction band structure of GeNWs by a tight-binding model and obtained the fundamental understanding of electron transport characteristics in [001], [110], [111], and [112] GeNW FETs. The simulation of ballistic electron transport revealed that [110] GeNW FETs on the (001) face achieve high drive current as well as high injection velocity, being the best choice for n-channel FETs.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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