硅单电子晶体管的高频特性

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243339

H. Takenaka, M. Shinohara, T. Uchida, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi

{"title":"硅单电子晶体管的高频特性","authors":"H. Takenaka, M. Shinohara, T. Uchida, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi","doi":"10.1109/SNW.2012.6243339","DOIUrl":null,"url":null,"abstract":"High-frequency limit of Si single-electron transistor (SET) is investigated. Since the SETs inevitably have tunnel barriers, the operation speed is thought to be low. To measure the high frequency properties of SETs, we employed their special rectification characteristics, which occurred due to the asymmetry of Coulomb diamond when alternating current voltage was applied to the drain terminal. By the use of the effect, we evaluated the high-frequency properties of Si SETs.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":"2001 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-frequency properties of Si single-electron transistor\",\"authors\":\"H. Takenaka, M. Shinohara, T. Uchida, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi\",\"doi\":\"10.1109/SNW.2012.6243339\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-frequency limit of Si single-electron transistor (SET) is investigated. Since the SETs inevitably have tunnel barriers, the operation speed is thought to be low. To measure the high frequency properties of SETs, we employed their special rectification characteristics, which occurred due to the asymmetry of Coulomb diamond when alternating current voltage was applied to the drain terminal. By the use of the effect, we evaluated the high-frequency properties of Si SETs.\",\"PeriodicalId\":6402,\"journal\":{\"name\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"2001 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2012.6243339\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了硅单电子晶体管(SET)的高频极限。由于set不可避免地存在隧道障碍，因此被认为运行速度较低。为了测量set的高频特性，我们利用了它们在漏极施加交流电压时由于库仑金刚石的不对称性而产生的特殊整流特性。利用该效应，我们评估了Si set的高频特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

High-frequency properties of Si single-electron transistor

High-frequency limit of Si single-electron transistor (SET) is investigated. Since the SETs inevitably have tunnel barriers, the operation speed is thought to be low. To measure the high frequency properties of SETs, we employed their special rectification characteristics, which occurred due to the asymmetry of Coulomb diamond when alternating current voltage was applied to the drain terminal. By the use of the effect, we evaluated the high-frequency properties of Si SETs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE Silicon Nanoelectronics Workshop (SNW)

自引率

0.00%

发文量