Koji Obata, Kazuo Matsukawa, Takuji Miki, Y. Tsukamoto, K. Sushihara
{"title":"具有动态单元匹配和调制抖动效应的97.99 dB SNDR, 2khz BW, 37.1µW噪声整形SAR ADC","authors":"Koji Obata, Kazuo Matsukawa, Takuji Miki, Y. Tsukamoto, K. Sushihara","doi":"10.1109/VLSIC.2016.7573463","DOIUrl":null,"url":null,"abstract":"A 97.99 dB SNDR, 2 kHz bandwidth noise-shaping SAR ADC was fabricated in 28 nm CMOS process. By integrating residue of 12 bit SAR AD conversion with 3rd order integrator, Σ modulation is achieved and noise floor of AD conversion is shaped. Distortion due to mismatch of capacitive DAC is eliminated by introducing dynamic element matching (DEM) technique and by utilizing modulation dither effect. The ADC consumes 37.1 μW with 100 kHz sampling speed and achieves Schreier's figure of merit (FoMs) of 175.3 dB.","PeriodicalId":6512,"journal":{"name":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","volume":"46 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"48","resultStr":"{\"title\":\"A 97.99 dB SNDR, 2 kHz BW, 37.1 µW noise-shaping SAR ADC with dynamic element matching and modulation dither effect\",\"authors\":\"Koji Obata, Kazuo Matsukawa, Takuji Miki, Y. Tsukamoto, K. Sushihara\",\"doi\":\"10.1109/VLSIC.2016.7573463\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 97.99 dB SNDR, 2 kHz bandwidth noise-shaping SAR ADC was fabricated in 28 nm CMOS process. By integrating residue of 12 bit SAR AD conversion with 3rd order integrator, Σ modulation is achieved and noise floor of AD conversion is shaped. Distortion due to mismatch of capacitive DAC is eliminated by introducing dynamic element matching (DEM) technique and by utilizing modulation dither effect. The ADC consumes 37.1 μW with 100 kHz sampling speed and achieves Schreier's figure of merit (FoMs) of 175.3 dB.\",\"PeriodicalId\":6512,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)\",\"volume\":\"46 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"48\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2016.7573463\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2016.7573463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 97.99 dB SNDR, 2 kHz BW, 37.1 µW noise-shaping SAR ADC with dynamic element matching and modulation dither effect
A 97.99 dB SNDR, 2 kHz bandwidth noise-shaping SAR ADC was fabricated in 28 nm CMOS process. By integrating residue of 12 bit SAR AD conversion with 3rd order integrator, Σ modulation is achieved and noise floor of AD conversion is shaped. Distortion due to mismatch of capacitive DAC is eliminated by introducing dynamic element matching (DEM) technique and by utilizing modulation dither effect. The ADC consumes 37.1 μW with 100 kHz sampling speed and achieves Schreier's figure of merit (FoMs) of 175.3 dB.