G. Ma, Qiang Chen, O. Tornblad, Tao Wei, C. Ahrens, R. Gerlach
{"title":"高频功率LDMOS技术在基站中的应用现状、潜力和基准测试","authors":"G. Ma, Qiang Chen, O. Tornblad, Tao Wei, C. Ahrens, R. Gerlach","doi":"10.1109/IEDM.2005.1609351","DOIUrl":null,"url":null,"abstract":"LDMOS technologies based in G. Ma et al. (1996) and H. Brech et al. (2003) have been in dominate position in wireless base station applications for frequencies ranging from 450MHz to 2.7GHz for the last 10 years due to performance, cost, reliability, and power capability advantages. This paper reviews the leading edge LDMOS development at Infineon and discusses future potential and limitation for LDMOS technologies in general; benchmarking with alternative technologies is also presented","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"71 1","pages":"361-364"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"High frequency power LDMOS technologies for base station applications status, potential, and benchmarking\",\"authors\":\"G. Ma, Qiang Chen, O. Tornblad, Tao Wei, C. Ahrens, R. Gerlach\",\"doi\":\"10.1109/IEDM.2005.1609351\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"LDMOS technologies based in G. Ma et al. (1996) and H. Brech et al. (2003) have been in dominate position in wireless base station applications for frequencies ranging from 450MHz to 2.7GHz for the last 10 years due to performance, cost, reliability, and power capability advantages. This paper reviews the leading edge LDMOS development at Infineon and discusses future potential and limitation for LDMOS technologies in general; benchmarking with alternative technologies is also presented\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"71 1\",\"pages\":\"361-364\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609351\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609351","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High frequency power LDMOS technologies for base station applications status, potential, and benchmarking
LDMOS technologies based in G. Ma et al. (1996) and H. Brech et al. (2003) have been in dominate position in wireless base station applications for frequencies ranging from 450MHz to 2.7GHz for the last 10 years due to performance, cost, reliability, and power capability advantages. This paper reviews the leading edge LDMOS development at Infineon and discusses future potential and limitation for LDMOS technologies in general; benchmarking with alternative technologies is also presented
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