超低k材料的无损伤低温刻蚀

2013 IEEE International Interconnect Technology Conference - IITC Pub Date : 2013-06-13 DOI:10.1109/IITC.2013.6615562

M. Baklanov, Liping Zhang, R. Dussart, J. de Marneffe

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引用次数: 0

摘要

对多孔有机硅酸盐(OSG)薄膜进行了低温刻蚀。由于腐蚀副产物凝聚在低钾材料的孔隙中，起到了保护作用，从而减少了等离子体引起的损伤。当晶圆温度低于某一临界温度时，几乎没有观察到碳损耗。大多数实验是用SF6等离子体进行的。在气体放电中加入SiF4/O2，通过形成SiOxFy钝化层，可以进一步减少等离子体引起的损伤。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Damage free cryogenic etching of ultra low-k materials

Cryogenic etching was applied to porous organosilicate (OSG) films. Plasma-induced damage was reduced due to the protective effect of etch by-products condensed in pores of low-k materials. Almost no carbon depletion was observed when the wafer temperature is below a certain critical level. Most of experiments were carried out with SF₆ plasma. The addition of SiF₄/O₂ into the gas discharge allows a further reduction of plasma-induced damage by formation of a SiO_xF_y passivation layer.

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2013 IEEE International Interconnect Technology Conference - IITC

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