{"title":"统计设计方法在低压模拟MOS集成电路中的应用","authors":"T. Tarim, M. Ismail","doi":"10.1109/ISCAS.2000.858702","DOIUrl":null,"url":null,"abstract":"The statistical design of the four-MOSFET structure and the 10-bit current division network is presented in this paper. The quantitative measure of the effect of mismatch between the transistors in both circuits is provided. Optimization of transistor W and L values, and yield enhancement are demonstrated. The circuits are fabricated through the MOSIS 2 /spl mu/m process using MOS transistor Level-3 model parameters. The experimental results are included in the paper.","PeriodicalId":6422,"journal":{"name":"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Application of a statistical design methodology to low voltage analog MOS integrated circuits\",\"authors\":\"T. Tarim, M. Ismail\",\"doi\":\"10.1109/ISCAS.2000.858702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The statistical design of the four-MOSFET structure and the 10-bit current division network is presented in this paper. The quantitative measure of the effect of mismatch between the transistors in both circuits is provided. Optimization of transistor W and L values, and yield enhancement are demonstrated. The circuits are fabricated through the MOSIS 2 /spl mu/m process using MOS transistor Level-3 model parameters. The experimental results are included in the paper.\",\"PeriodicalId\":6422,\"journal\":{\"name\":\"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.2000.858702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2000.858702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Application of a statistical design methodology to low voltage analog MOS integrated circuits
The statistical design of the four-MOSFET structure and the 10-bit current division network is presented in this paper. The quantitative measure of the effect of mismatch between the transistors in both circuits is provided. Optimization of transistor W and L values, and yield enhancement are demonstrated. The circuits are fabricated through the MOSIS 2 /spl mu/m process using MOS transistor Level-3 model parameters. The experimental results are included in the paper.
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