等离子体增强原子层沉积制备η - 3-2-甲基烯丙基N, N'-二异丙基乙酰氨基甲酸镍(II)

2013 IEEE International Interconnect Technology Conference - IITC Pub Date : 2013-06-13 DOI:10.1109/IITC.2013.6615573

Jiro Yokota, Clement Lansalot, Changhee Ko

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摘要

研究了新型η3-2-甲基烯丙基N,N'-二异丙基乙酰氨基甲酸镍(II)前驱体的等离子体增强原子层沉积(PEALD)。选择NH3作为最合适的助反应物进行沉积。在200°C和300°C下观察(PE)ALD饱和度，沉积速率分别为1.0 Å/cycle和1.2Å/cycle。在300°C下，没有观察到线性膜生长的孵育时间。在SiO2晶片上进行了沉积，SEM图像分析显示台阶覆盖率接近100%。H2退火后处理可获得非常纯净的镍膜，其电阻率值降至9μΩ·cm，接近体镍的电阻率值(5-10μΩ·cm)[1]。

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Thin nickel films growth using plasma enhanced atomic layer deposition from η3-2-methylallyl N, N'-diisopropylacetamidinate nickel(II)

Plasma enhanced atomic layer deposition (PEALD) using the novel η³-2-methylallyl N,N'-diisopropylacetamidinate nickel(II) precursor has been investigated. NH₃ has been selected as the most appropriate co-reactant for the depositions. (PE)ALD saturations were observed at 200°C and 300 °C, with a deposition rate of 1.0 Å/cycle and 1.2Å/cycle respectively. No incubation time was observed with linear film growth at 300°C. Deposition on SiO₂ patterned wafer was performed and SEM image analysis showed good step coverage of close to 100%. H₂ anneal post treatment allowed to obtain very pure nickel film and resistivities value down to 9μΩ·cm, close to the resistivity value of bulk nickel (5-10μΩ·cm) [1].

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2013 IEEE International Interconnect Technology Conference - IITC

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