用于MEMS的部分填充HAR tsv的研究

2013 IEEE International Interconnect Technology Conference - IITC Pub Date : 2013-06-13 DOI:10.1109/IITC.2013.6615585

L. Hofmann, I. Schubert, K. Gottfried, S. Schulz, T. Gessner

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引用次数: 3

摘要

出于降低应力的考虑，har - tsv仅部分填充了铜。并与环形tsv(即带硅芯的铜环)进行了比较。从工艺能力和良率两个方面讨论了TSV实现的两种方法(分别是在晶圆键合/减薄之前和之后)。电测量产率11 MΩ为单个TSV和76 MΩ为4点TSV链(包括RDL)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigations on partially filled HAR tsvs for MEMS applications

For considerations of stress reduction HAR-TSVs were only partially filled with copper. A comparison was made to ring shaped TSVs (i.e. copper ring with silicon core). Two approaches regarding the way of TSV implementation (before and after wafer bonding/ thinning, resp.) are discussed, concerning process ability and yield aspects. Electrical measurement yield 11 MΩ for a single TSV and 76 MΩ for a 4-point TSV-chain (incl. RDL).

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2013 IEEE International Interconnect Technology Conference - IITC

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