F. Zhang, P. Huang, B. Chen, D. Yu, Y. Fu, L. Ma, B. Gao, L. Liu, X. Liu, J. Kang
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引用次数: 2
摘要
n-Si/HfO2/Ni/TiN器件具有良好的整流特性，整流比> 107，驱动电流为1mA作为类1d选择器。采用n+ si /HfO2/Ni/TiN (1D)的二极管器件和n+-Si/HfOx/Ni/TiN (1R)的单极RRAM结构的1D1R电池显示了整流单极开关行为。基于测量的I-V特性，这些优异的选择行为可以在> 64K位RRAM的跨条存储器阵列中实现，并且具有较大的读余量。
Rectifying characteristics and implementation of n-Si/HfO2 based devices for 1D1R-based cross-bar memory array
Excellent rectifying characteristics are demonstrated in the fab-friendly n-Si/HfO2/Ni/TiN devices with rectification ratio of >;107 and the driving current of 1mA as a 1D-like selector. The rectified unipolar switching behaviors are demonstrated in the 1D1R cell structured with a diode-like device of n-Si/HfO2/Ni/TiN (1D) and a unipolar RRAM of n+-Si/HfOx/Ni/TiN (1R). Based on the measured I-V characteristics, these excellent selection behavior can be implemented in the cross-bar memory array of >;64K bits RRAM with large read margin.
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