{"title":"基于编程物理新见解的硅化多晶硅熔断器的超快速编程","authors":"T. Doorn, M. Altheimer","doi":"10.1109/IEDM.2005.1609439","DOIUrl":null,"url":null,"abstract":"New insights in the programming physics of silicided polysilicon fuses integrated in 90 nm CMOS have led to a programming time of 100 ns, while achieving a resistance increase of 107. This is an order of magnitude better than any previously published result for the programming time and resistance increase individually. Simple calculations and TEM-analyses substantiate the proposed programming mechanism. The advantage of a rectangular fuse head over a tapered fuse head is shown and explained","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"49 1","pages":"667-670"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Ultra-fast programming of silicided polysilicon fuses based on new insights in the programming physics\",\"authors\":\"T. Doorn, M. Altheimer\",\"doi\":\"10.1109/IEDM.2005.1609439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New insights in the programming physics of silicided polysilicon fuses integrated in 90 nm CMOS have led to a programming time of 100 ns, while achieving a resistance increase of 107. This is an order of magnitude better than any previously published result for the programming time and resistance increase individually. Simple calculations and TEM-analyses substantiate the proposed programming mechanism. The advantage of a rectangular fuse head over a tapered fuse head is shown and explained\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"49 1\",\"pages\":\"667-670\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609439\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-fast programming of silicided polysilicon fuses based on new insights in the programming physics
New insights in the programming physics of silicided polysilicon fuses integrated in 90 nm CMOS have led to a programming time of 100 ns, while achieving a resistance increase of 107. This is an order of magnitude better than any previously published result for the programming time and resistance increase individually. Simple calculations and TEM-analyses substantiate the proposed programming mechanism. The advantage of a rectangular fuse head over a tapered fuse head is shown and explained
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