基于编程物理新见解的硅化多晶硅熔断器的超快速编程

T. Doorn, M. Altheimer
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引用次数: 19

摘要

在90 nm CMOS中集成的硅化多晶硅熔断器的编程物理方面的新见解导致编程时间为100 ns,同时实现了107的电阻增加。这比以前发表的编程时间和电阻分别增加的结果要好一个数量级。简单的计算和tem分析证实了所提出的编程机制。矩形保险丝头比锥形保险丝头的优点被展示和解释
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Ultra-fast programming of silicided polysilicon fuses based on new insights in the programming physics
New insights in the programming physics of silicided polysilicon fuses integrated in 90 nm CMOS have led to a programming time of 100 ns, while achieving a resistance increase of 107. This is an order of magnitude better than any previously published result for the programming time and resistance increase individually. Simple calculations and TEM-analyses substantiate the proposed programming mechanism. The advantage of a rectangular fuse head over a tapered fuse head is shown and explained
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