An Chen, S. Haddad, Yi-Ching Wu, T. Fang, Zhida Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. Vanbuskirk, M. Taguchi
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Non-volatile resistive switching for advanced memory applications
A non-volatile resistive switching mechanism based on trap-related space-charge-limited-conduction (SCLC) is proposed. Excellent memory characteristics have been demonstrated using near-stoichiometric cuprous oxide (CuxO) metal-insulator-metal (MIM) structures: low-power operation, fast switching speed, superior temperature characteristics, and long retention. This MIM memory cell is fully compatible with standard CMOS process. The proposed switching mechanism is a strong contender for high density and low cost memory applications
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