硅锗BiCMOS集成与可靠性的发展趋势

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843921

J. Dunn, D. Harame, S. St. Onge, A. Joseph, N. Feilchenfeld, K. Watson, S. Subbanna, G. Freeman, S. Voldman, D. Ahlgren, R. Johnson

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引用次数: 19

摘要

针对0.25 /spl mu/m SiGe BiCMOS，提出了一种基-后-门集成方案，并对该方案进行了详细讨论。综述了高频晶体管NPN器件的可靠性。在高集电极基极电压和高发射极电流的应用中使用SiGe的可靠性方面也进行了探讨。最后，总结了SiGe BiCMOS技术元件的ESD特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Trends in silicon germanium BiCMOS integration and reliability

A base-after-gate integration scheme has been developed fora 0.25 /spl mu/m SiGe BiCMOS and the details of the approach are discussed. NPN device reliability is reviewed for high-frequency transistors. The reliability aspects associated with using SiGe for applications with high collector-base voltage with high emitter current are also explored. Finally, the ESD characteristics of the SiGe BiCMOS technology elements are summarized.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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