{"title":"一种低功耗、低噪声、超宽动态范围的像素并行A/D转换CMOS成像仪","authors":"L.G. Mellrath","doi":"10.1109/VLSIC.2000.852841","DOIUrl":null,"url":null,"abstract":"A CMOS image sensor with pixel-parallel A/D conversion fabricated with different array sizes and photodiode types in a 3-metal 0.5 /spl mu/m process is presented. Nominal power dissipation is 40 nW per pixel at V/sub DD/=3.3 V. A/D conversion results from sampling a free-running photocurrent-controlled oscillator to give a first-order /spl Sigma/-/spl Delta/ sequence. The sensor displays dynamic range capability of greater than 150000:1 and exhibits fixed pattern noise correctable to within 0.1% of signal.","PeriodicalId":6361,"journal":{"name":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","volume":"5 1","pages":"24-27"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A low power, low noise, ultra-wide dynamic range CMOS imager with pixel-parallel A/D conversion\",\"authors\":\"L.G. Mellrath\",\"doi\":\"10.1109/VLSIC.2000.852841\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS image sensor with pixel-parallel A/D conversion fabricated with different array sizes and photodiode types in a 3-metal 0.5 /spl mu/m process is presented. Nominal power dissipation is 40 nW per pixel at V/sub DD/=3.3 V. A/D conversion results from sampling a free-running photocurrent-controlled oscillator to give a first-order /spl Sigma/-/spl Delta/ sequence. The sensor displays dynamic range capability of greater than 150000:1 and exhibits fixed pattern noise correctable to within 0.1% of signal.\",\"PeriodicalId\":6361,\"journal\":{\"name\":\"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)\",\"volume\":\"5 1\",\"pages\":\"24-27\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2000.852841\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2000.852841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low power, low noise, ultra-wide dynamic range CMOS imager with pixel-parallel A/D conversion
A CMOS image sensor with pixel-parallel A/D conversion fabricated with different array sizes and photodiode types in a 3-metal 0.5 /spl mu/m process is presented. Nominal power dissipation is 40 nW per pixel at V/sub DD/=3.3 V. A/D conversion results from sampling a free-running photocurrent-controlled oscillator to give a first-order /spl Sigma/-/spl Delta/ sequence. The sensor displays dynamic range capability of greater than 150000:1 and exhibits fixed pattern noise correctable to within 0.1% of signal.
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