D. Yu, L. Liu, B. Chen, F. Zhang, B. Gao, Y. Fu, X. Liu, J. Kang, X. Zhang
{"title":"Ag/SiO2/Pt RRAM器件的多电平电阻开关特性","authors":"D. Yu, L. Liu, B. Chen, F. Zhang, B. Gao, Y. Fu, X. Liu, J. Kang, X. Zhang","doi":"10.1109/EDSSC.2011.6117721","DOIUrl":null,"url":null,"abstract":"Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes. Good endurance and retention characteristics of RRAM device with four resistance states were achieved. The possible mechanism of multilevel RS was discussed.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":"329 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Multilevel resistive switching characteristics in Ag/SiO2/Pt RRAM devices\",\"authors\":\"D. Yu, L. Liu, B. Chen, F. Zhang, B. Gao, Y. Fu, X. Liu, J. Kang, X. Zhang\",\"doi\":\"10.1109/EDSSC.2011.6117721\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes. Good endurance and retention characteristics of RRAM device with four resistance states were achieved. The possible mechanism of multilevel RS was discussed.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":\"329 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117721\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117721","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multilevel resistive switching characteristics in Ag/SiO2/Pt RRAM devices
Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes. Good endurance and retention characteristics of RRAM device with four resistance states were achieved. The possible mechanism of multilevel RS was discussed.