D. Sarkar, E. Onyegam, S. Saha, L. Mathew, R. Rao, M. Hilali, R. S. Smith, Dewei Xu, D. Jawarani, R. Garcia, R. Stout, A. Gurmu, M. Ainom, J. Fossum, S. Banerjee
{"title":"高效超薄~ 25微米晶体硅太阳能电池的远程等离子体化学气相沉积","authors":"D. Sarkar, E. Onyegam, S. Saha, L. Mathew, R. Rao, M. Hilali, R. S. Smith, Dewei Xu, D. Jawarani, R. Garcia, R. Stout, A. Gurmu, M. Ainom, J. Fossum, S. Banerjee","doi":"10.1109/PVSC-VOL2.2013.6656713","DOIUrl":null,"url":null,"abstract":"For the first time, a remote plasma chemical vapor deposition (RPCVD) based c-Si/a-Si heterojunction solar cell process was developed on thin crystalline silicon semiconductor-on-metal (SOM) substrate. In RPCVD systems, deposition temperature, deposition rate, and the distance of the sample from the plasma source can be varied to minimize the surface damage and enhance passivation quality. A silicon heterojunction (HJ) cell without intrinsic a-Si layer passivation was fabricated on an exfoliated ∼25µm c-Si SOM foil, with an efficiency of 13.4% and open-circuit voltage of 645mV. Losses in these devices were analyzed by numerical simulations and optimum device structure was designed and performance predicted.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":"46 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells\",\"authors\":\"D. Sarkar, E. Onyegam, S. Saha, L. Mathew, R. Rao, M. Hilali, R. S. Smith, Dewei Xu, D. Jawarani, R. Garcia, R. Stout, A. Gurmu, M. Ainom, J. Fossum, S. Banerjee\",\"doi\":\"10.1109/PVSC-VOL2.2013.6656713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, a remote plasma chemical vapor deposition (RPCVD) based c-Si/a-Si heterojunction solar cell process was developed on thin crystalline silicon semiconductor-on-metal (SOM) substrate. In RPCVD systems, deposition temperature, deposition rate, and the distance of the sample from the plasma source can be varied to minimize the surface damage and enhance passivation quality. A silicon heterojunction (HJ) cell without intrinsic a-Si layer passivation was fabricated on an exfoliated ∼25µm c-Si SOM foil, with an efficiency of 13.4% and open-circuit voltage of 645mV. Losses in these devices were analyzed by numerical simulations and optimum device structure was designed and performance predicted.\",\"PeriodicalId\":6420,\"journal\":{\"name\":\"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2\",\"volume\":\"46 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC-VOL2.2013.6656713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC-VOL2.2013.6656713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells
For the first time, a remote plasma chemical vapor deposition (RPCVD) based c-Si/a-Si heterojunction solar cell process was developed on thin crystalline silicon semiconductor-on-metal (SOM) substrate. In RPCVD systems, deposition temperature, deposition rate, and the distance of the sample from the plasma source can be varied to minimize the surface damage and enhance passivation quality. A silicon heterojunction (HJ) cell without intrinsic a-Si layer passivation was fabricated on an exfoliated ∼25µm c-Si SOM foil, with an efficiency of 13.4% and open-circuit voltage of 645mV. Losses in these devices were analyzed by numerical simulations and optimum device structure was designed and performance predicted.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
