SoC中NAND闪存控制器的设计与实现

Gong Xin, D. Zibin, Li Wei, Feng Lulu
{"title":"SoC中NAND闪存控制器的设计与实现","authors":"Gong Xin, D. Zibin, Li Wei, Feng Lulu","doi":"10.1109/EDSSC.2011.6117658","DOIUrl":null,"url":null,"abstract":"NAND Flash is widely used in modern digital products and it has become a trend to integrate NAND Flash controller into SoC. This paper discussed the implementation scheme of the NAND Flash controller in detial, including the design of state machine, ECC module and so on. In order to improve the data access speed of NAND Flash Controller, this paper proposed two technologies which increase little area but improve the performance of the controller effectively. The test results based on FPGA showed that this design had high practical value. Based on SMIC 0.18µm standard CMOS technology, this design can work at the frequency of 121MHz.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Design and implementation of a NAND Flash controller in SoC\",\"authors\":\"Gong Xin, D. Zibin, Li Wei, Feng Lulu\",\"doi\":\"10.1109/EDSSC.2011.6117658\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NAND Flash is widely used in modern digital products and it has become a trend to integrate NAND Flash controller into SoC. This paper discussed the implementation scheme of the NAND Flash controller in detial, including the design of state machine, ECC module and so on. In order to improve the data access speed of NAND Flash Controller, this paper proposed two technologies which increase little area but improve the performance of the controller effectively. The test results based on FPGA showed that this design had high practical value. Based on SMIC 0.18µm standard CMOS technology, this design can work at the frequency of 121MHz.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117658\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

NAND闪存在现代数码产品中得到了广泛的应用,将NAND闪存控制器集成到SoC中已成为一种趋势。本文详细讨论了NAND闪存控制器的实现方案,包括状态机、ECC模块的设计等。为了提高NAND闪存控制器的数据访问速度,本文提出了两种增加面积小但有效提高控制器性能的技术。基于FPGA的测试结果表明,该设计具有较高的实用价值。本设计基于中芯国际0.18µm标准CMOS技术,工作频率为121MHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Design and implementation of a NAND Flash controller in SoC
NAND Flash is widely used in modern digital products and it has become a trend to integrate NAND Flash controller into SoC. This paper discussed the implementation scheme of the NAND Flash controller in detial, including the design of state machine, ECC module and so on. In order to improve the data access speed of NAND Flash Controller, this paper proposed two technologies which increase little area but improve the performance of the controller effectively. The test results based on FPGA showed that this design had high practical value. Based on SMIC 0.18µm standard CMOS technology, this design can work at the frequency of 121MHz.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Copyright page Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate 3D modeling of CMOS image sensor: From process to opto-electronic response A novel compact isolated structure for 600V Gate Drive IC Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1