利用双层钨纳米晶增强短通道非易失性存储器件的记忆窗口

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609297

S. Samanta, P.K. Singh, W. Yoo, G. Samudra, Y. Yeo, L. Bera, N. Balasubramanian

{"title":"利用双层钨纳米晶增强短通道非易失性存储器件的记忆窗口","authors":"S. Samanta, P.K. Singh, W. Yoo, G. Samudra, Y. Yeo, L. Bera, N. Balasubramanian","doi":"10.1109/IEDM.2005.1609297","DOIUrl":null,"url":null,"abstract":"This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"72 1","pages":"170-173"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":"{\"title\":\"Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals\",\"authors\":\"S. Samanta, P.K. Singh, W. Yoo, G. Samudra, Y. Yeo, L. Bera, N. Balasubramanian\",\"doi\":\"10.1109/IEDM.2005.1609297\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"72 1\",\"pages\":\"170-173\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"31\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609297\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 31

摘要

本文首次报道了采用双W纳米晶嵌入HfAlO的下一代存储应用，在栅极长度低至100 nm的小型器件上具有存储器增强特性和良好的保留性能，并且具有两位操作的可行性。双层器件显示出随缩放而增加的内存窗口，这将是非常有益的

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals

This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

自引率

0.00%

发文量