电阻式开关随机存取存储器(RRAM)的研究进展

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243331

Yi Wu, Shimeng Yu, X. Guan, H. Wong

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引用次数: 13

摘要

本文综述了近年来金属氧化物电阻开关存储器(RRAM)的研究进展。我们探索了金属氧化物RRAM中电阻开关的随机性，并建立了一个二维解析解算器来解释基于hfox的RRAM中开关参数的变化。作为数字内存/存储之外的应用示例，研究了基于alox的RRAM用于神经形态计算。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent progress of resistive switching random access memory (RRAM)

This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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