Lung-Hsing Hsu, Yuh-Jen Cheng, P. Yu, H. Kuo, C. Lin
{"title":"光探测器件中图案InN的光学特性","authors":"Lung-Hsing Hsu, Yuh-Jen Cheng, P. Yu, H. Kuo, C. Lin","doi":"10.1109/PVSC.2018.8547838","DOIUrl":null,"url":null,"abstract":"InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LPMOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 ˜1580 nm), and the portion photocurrent (920 nm long pass) exhibits 33° measured via AM1.5G solar simulated spectra.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"31 1","pages":"1806-1809"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical Properties of Patterned InN in Photodetection Devices\",\"authors\":\"Lung-Hsing Hsu, Yuh-Jen Cheng, P. Yu, H. Kuo, C. Lin\",\"doi\":\"10.1109/PVSC.2018.8547838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LPMOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 ˜1580 nm), and the portion photocurrent (920 nm long pass) exhibits 33° measured via AM1.5G solar simulated spectra.\",\"PeriodicalId\":6558,\"journal\":{\"name\":\"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)\",\"volume\":\"31 1\",\"pages\":\"1806-1809\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2018.8547838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2018.8547838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical Properties of Patterned InN in Photodetection Devices
InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LPMOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 ˜1580 nm), and the portion photocurrent (920 nm long pass) exhibits 33° measured via AM1.5G solar simulated spectra.
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