{"title":"一种用于10gb SONET接收机的Si BiCMOS跨阻抗放大器","authors":"H.H. Kim, S. Chandrasekhar, C. Burrus, J. Bauman","doi":"10.1109/VLSIC.2000.852881","DOIUrl":null,"url":null,"abstract":"A trans-impedance amplifier integrated with an InP PIN photodiode has been demonstrated for 10 Gb SONET receiver. The shunt feedback trans-impedance amplifier is fabricated in 0.25 /spl mu/m modular Si BICMOS technology. The feedback resistance of 870 /spl Omega/ is achieved with a bandwidth of 8.5 GHz. The sensitivity of the trans-impedance amplifier at 10 Gb/s is -17 dBm at a bit-error-rate (BER) of 10/sup -12/ with 2/sup 31/-1 pseudo-random bits.","PeriodicalId":6361,"journal":{"name":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","volume":"22 1","pages":"170-173"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Si BiCMOS trans-impedance amplifier for 10 Gb SONET receiver\",\"authors\":\"H.H. Kim, S. Chandrasekhar, C. Burrus, J. Bauman\",\"doi\":\"10.1109/VLSIC.2000.852881\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A trans-impedance amplifier integrated with an InP PIN photodiode has been demonstrated for 10 Gb SONET receiver. The shunt feedback trans-impedance amplifier is fabricated in 0.25 /spl mu/m modular Si BICMOS technology. The feedback resistance of 870 /spl Omega/ is achieved with a bandwidth of 8.5 GHz. The sensitivity of the trans-impedance amplifier at 10 Gb/s is -17 dBm at a bit-error-rate (BER) of 10/sup -12/ with 2/sup 31/-1 pseudo-random bits.\",\"PeriodicalId\":6361,\"journal\":{\"name\":\"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)\",\"volume\":\"22 1\",\"pages\":\"170-173\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2000.852881\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2000.852881","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Si BiCMOS trans-impedance amplifier for 10 Gb SONET receiver
A trans-impedance amplifier integrated with an InP PIN photodiode has been demonstrated for 10 Gb SONET receiver. The shunt feedback trans-impedance amplifier is fabricated in 0.25 /spl mu/m modular Si BICMOS technology. The feedback resistance of 870 /spl Omega/ is achieved with a bandwidth of 8.5 GHz. The sensitivity of the trans-impedance amplifier at 10 Gb/s is -17 dBm at a bit-error-rate (BER) of 10/sup -12/ with 2/sup 31/-1 pseudo-random bits.
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