非分离硅杂富勒烯的结构、拓扑、振动频率、前沿分子轨道间隙、稳定性、电荷、NICS和电导率:一种DFT方法

Somayeh Soleimam-Amin, M. Koohi
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引用次数: 1

摘要

通过密度泛函理论(DFT)计算,比较和对比了硅掺杂的杂富勒烯C20, I-VIII。通过振动频率分析,所有被研究的物种都被称为真极小值。由于缺乏弱的硅-硅单键,在赤道位置上含有交替杂原子的杂富勒烯被引入为稳定的高掺杂杂富勒烯。8个孤立的杂富勒烯未见变形,均为孤立的五边形富勒烯笼。具有最大负NICS、最高带隙和结合能的杂富勒烯是热力学、动力学和化学性质最稳定的杂富勒烯。计算得到具有C1对称性的C18Si2 (II)的结构包括两个位于赤道位置的硅原子。杂富勒烯特别是碳原子负电荷最多、硅杂原子正电荷最多(是其他杂原子的3 ~ 5.6倍)的杂富勒烯,在杂富勒烯表面显示出不同的电荷点,使它们的电荷转移较大。这使它成为一个很好的储氢志愿者。这些计算结果促使化学家进行更多的实验验证。
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Structure, Topology, Vibrational Frequency, Frontier Molecular Orbital Gaps, Stability, Charge, NICS, and Conductivity of Non-segregated Silicon Heterofullerenes: A DFT Approach
Silicon doped heterofullerenes of C20, I-VIII, are compared and contrasted by density functional theory (DFT) calculations. All studied species are known as true minima by vibrational frequency analysis. Heterofullerenes included alternating heteroatoms in equatorial position are introduced as stable highly-doped heterofullerenes due to lack of weak silicon―silicon single bonds. No deformation was seen for eight isolated heterofullerenes and all are the isolated-pentagon fullerenic cage. The species of II with the most negative NICS, as well as the highest band gap and binding energy is distinguished as the most thermodynamically, kinetically and chemically stable heterofullerene. The calculated structure of C18Si2 (II) with C1 symmetry is included two silicon atoms in equatorial position. Heterofullerenes especially VIII with the most negative charges on carbon atoms and the most positive charges on silicon heteroatoms (3 to 5.6 times in relation to other species), display the points with different charges that make big charge transfer on the surface of them. That make it as an excellent volunteer for hydrogen storage. These computational results promote chemists to have more experimental verifications.
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