Y. Nakabayashi, T. Ishihara, J. Koga, M. Takayanagi, S. Takagi
{"title":"高掺杂沟道Si mosfet中反转层迁移率的新发现","authors":"Y. Nakabayashi, T. Ishihara, J. Koga, M. Takayanagi, S. Takagi","doi":"10.1109/IEDM.2005.1609287","DOIUrl":null,"url":null,"abstract":"Inversion-layer mobility in highly doped channel Si MOSFETs was investigated. It was found, for the first time, substrate Coulomb scattering (mu<sub>sub</sub>) has anomalous surface carrier density (N <sub>S</sub>) dependence when acceptor concentration (N<sub>A</sub>) becomes larger than 2times10<sup>18</sup> cm<sup>-3</sup>. The mu <sub>sub</sub> behavior can be explained by the suppression of the screening effect. In addition, interface Coulomb scattering (mu<sub>it </sub>) has stronger N<sub>S</sub> dependence than ever reported. The mu<sub>it</sub> behavior can be explained in terms of the relative distance between the surface carriers and interface states. Influence of high channel doping on MOS interface barrier height was also studied","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"36 1","pages":"133-136"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"New findings on inversion-layer mobility in highly doped channel Si MOSFETs\",\"authors\":\"Y. Nakabayashi, T. Ishihara, J. Koga, M. Takayanagi, S. Takagi\",\"doi\":\"10.1109/IEDM.2005.1609287\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Inversion-layer mobility in highly doped channel Si MOSFETs was investigated. It was found, for the first time, substrate Coulomb scattering (mu<sub>sub</sub>) has anomalous surface carrier density (N <sub>S</sub>) dependence when acceptor concentration (N<sub>A</sub>) becomes larger than 2times10<sup>18</sup> cm<sup>-3</sup>. The mu <sub>sub</sub> behavior can be explained by the suppression of the screening effect. In addition, interface Coulomb scattering (mu<sub>it </sub>) has stronger N<sub>S</sub> dependence than ever reported. The mu<sub>it</sub> behavior can be explained in terms of the relative distance between the surface carriers and interface states. Influence of high channel doping on MOS interface barrier height was also studied\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"36 1\",\"pages\":\"133-136\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609287\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609287","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New findings on inversion-layer mobility in highly doped channel Si MOSFETs
Inversion-layer mobility in highly doped channel Si MOSFETs was investigated. It was found, for the first time, substrate Coulomb scattering (musub) has anomalous surface carrier density (N S) dependence when acceptor concentration (NA) becomes larger than 2times1018 cm-3. The mu sub behavior can be explained by the suppression of the screening effect. In addition, interface Coulomb scattering (muit ) has stronger NS dependence than ever reported. The muit behavior can be explained in terms of the relative distance between the surface carriers and interface states. Influence of high channel doping on MOS interface barrier height was also studied
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