用于V/sub /控制的HfSiON介质加氟及其对多晶硅栅极fet可靠性的影响

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609366

M. Inoue, S. Tsujikawa, M. Mizutani, K. Nomura, T. Hayashi, K. Shiga, J. Yugami, J. Tsuchimoto, Y. Ohno, M. Yoneda

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引用次数: 22

摘要

利用通道注入技术将F注入到HfSiON介质中，可以有效降低多晶硅栅极fet的v值，提高NBTI。不伴有迁移率下降，驱动电流增加了180%。从分析和电学表征来看，第v次位移归因于陷阱密度的变化

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Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET

F incorporation into HfSiON dielectric using channel implantation technique is shown to be highly effective in lowering Vth and improving NBTI in poly-Si gate pFET. Mobility degradation is not accompanied and drive current is increased by 180%. From analytical and electrical characterization, the Vth shift is attributed to change in trap density

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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