Bandstructures

S. Tiwari
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引用次数: 0

摘要

介绍用于确定带结构的各种计算技术,它们的含义和缺陷是本章的范围,最后以半导体带结构的现实表示结束。讨论了半导体带结构的计算方法-紧密结合,正交平面波,密度泛函和k·p,重点是通过玩具模型的物理含义。引入有效质量定理和万尼尔函数作为研究非定域和定域行为的工具。强调了自旋通过自旋轨道耦合和卢廷格哈密顿量在价带结构中的作用。探索了IV族、III-V族和II-VI族化合物的半导体带隙行为,包括氮化物和无间隙半导体的带隙行为,以及对常见半导体电子带结构、态密度和van Hove奇点的见解。本章最后讨论了声子带结构。
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Bandstructures
The introduction of the various computation techniques for determining bandstructures, their implications and their pitfalls is the scope of this chapter, which ends up with a realistic representation of the bandstructures of semiconductors. Approaches to the calculation of semiconductor bandstructures—tight binding, orthogonalized plane waves, density functional and k · p—are discussed, with an emphasis on the physical implications through toy models. The effective mass theorem and Wannier functions are introduced as tools to explore nonlocalized and localized behaviors. Spin’s consequence in the valence bandstructure through spin-orbit coupling and the Luttinger Hamiltonian is emphasized. Semiconductor bandgap behavior in group IV, group III-V and group II-VI compounds is explored, including those of nitrides and gapless semiconductors, together with insights into the common semiconductors’ electron bandstructures, density of states and van Hove singularities. The chapter concludes with a discussion of phonon bandstructures.
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
期刊最新文献
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