S. Preis, A. Wiens, E. Lia, W. Heinrich, R. Jakoby, H. Maune, O. Bengtsson
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A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network
Thick-film barium-strontium-titanate varactors package-integrated with GaN HEMTs are high-efficiency and robust tunable devices that enable frequency agility and efficiency optimization. The tunable transistors presented here achieve 44.4 dBm output power, a peak PAE of 77% and a PAE configurability of 5.6 percentage points. Tunability in saturation remains almost constant for temperature and frequency sweeps from 20 to 80°C and 1.5 to 2.45 GHz, respectively. LTE and WCDMA measurements of the modules used in a power amplifier show good linearity results with −45 dBc ACLR for signals with a high peak-to-average power ratio of 9 dB, no degradation due to the varactors is observed.
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