紫外光波长和固化时间对自旋涂覆低钾薄膜性能的影响

M. Redzheb, L. Prager, M. Krishtab, S. Armini, K. Vanstreels, A. Franquet, P. Van Der Voort, M. Baklanov
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摘要

利用液相自组装(LPSA)机制,在Si衬底上制备了具有-40%孔隙率的先进自旋k2.3薄膜。研究了紫外辅助热模板去除作为一种更快的替代传统的热过程。在400℃条件下,分别在172 nm、222 nm、254 nm和185/254 nm窄带紫外光下照射不同时间。本文讨论了所得薄膜的光学、机械、化学和电学性能。波长约为172 nm的光子从一侧进入低k薄膜,对薄膜的电学和化学性能不利,而从另一侧进入低k薄膜,则显著改善了多孔低k薄膜的力学性能。与热固化2h相比,暴露在222 nm光下3分钟更有效地去除模板,同时两种情况下的机械和电学性能相似。使用254 nm或双波段254/185 nm光子的紫外线固化似乎对所施加剂量的模板去除效率有较小的贡献。为了更好地了解这些光子能量的有效贡献,需要更高的剂量。最后讨论了HF腐蚀机理。
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Impact of UV wavelength and curing time on the properties of spin-coated low-k films
Advanced spin-on k 2.3 films with -40% porosity were enabled by liquid phase self-assembly (LPSA) mechanism on Si substrates. UV-assisted thermal template removal is investigated as a faster alternative to the conventional thermal process. The as-deposited films were exposed to narrow-band UV light of 172 nm, 222 nm, 254 nm or 185/254 nm at 400°C for different time. The optical, mechanical, chemical and electrical properties of the resulting films are discussed in this work. Photons with wavelength of about 172 nm from one side are detrimental to the electrical and chemical properties of the low-k films but from the other side notably improve the porous low-k mechanical properties. Exposure to 222 nm light as short as 3 min. is more efficient in terms of template removal when compared to 2h thermal cure, while in both cases similar mechanical and electrical properties are reported. UV-cure using 254 nm or dual band 254/185 nm photons seem to have a minor contribution to the template removal efficiency for the applied doses. Higher doses are necessary in order to better understand the effective contribution of these photon energies. Finally, the HF etching mechanism is discussed.
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