半导体纳米结构的飞秒发光

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI:10.1364/qo.1997.qthd.2
B. Deveaud, S. Haacke, M. Hartig, R. Ambigapathy, I. B. Joseph, R. A. Taylor
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引用次数: 0

摘要

发光技术由于易于获得发光信号而被广泛应用于半导体纳米结构的研究,尤其是时间分辨发光技术。然而,对结果的解释有时是相当复杂的,人们通常发现,为了使结果有意义,必须采取一些谨慎措施。特别是,激发密度对检测到的发光信号的均匀性是一个相当重要的参数,而且通常希望在尽可能低的密度下工作。
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Femtosecond luminescence of semiconductor nanostructures
Luminescence has been quite widely used for the study of semiconductor nanostructures, and more especially time resolved luminescence, due to the ease to get a luminescence signal. The interpretation of the results however is sometimes quite complex, and one generally finds that some care has to be taken for the results to be meaningful. In particular, the homogeneity of the excited density over the detected luminescence signal is a quite important parameter, also it is often desirable to work at the lowest possible densities.
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
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