MoS 2畴边界的第一性原理研究:带弯曲的起源

T. Kaneko
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引用次数: 0

摘要

利用基于密度泛函理论的第一性原理计算,从理论上研究了相同极边相互面对的二硫化钼畴边界的电子结构。我们还发现,畴边界处能带的上移是由电荷积累引起的。对于这种能带变化,畴边界处的缺陷能级起着决定性的作用。
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First-principles study on domain boundary of MoS 2 : Origin of band bending
Using first-principles calculations based on density functional theory, electronic structure of domain boundary of MoS2 in which same polar edges are faced each other are investigated theoretically. We also find that the up-shift of energy bands at the domain boundaries are caused by charge accumulation. For such change in the energy bands, the defect levels at the domain boundaries play a decisive role.
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