{"title":"MoS 2畴边界的第一性原理研究:带弯曲的起源","authors":"T. Kaneko","doi":"10.7567/SSDM.2017.PS-13-21","DOIUrl":null,"url":null,"abstract":"Using first-principles calculations based on density functional theory, electronic structure of domain boundary of MoS2 in which same polar edges are faced each other are investigated theoretically. We also find that the up-shift of energy bands at the domain boundaries are caused by charge accumulation. For such change in the energy bands, the defect levels at the domain boundaries play a decisive role.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"50 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"First-principles study on domain boundary of MoS 2 : Origin of band bending\",\"authors\":\"T. Kaneko\",\"doi\":\"10.7567/SSDM.2017.PS-13-21\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using first-principles calculations based on density functional theory, electronic structure of domain boundary of MoS2 in which same polar edges are faced each other are investigated theoretically. We also find that the up-shift of energy bands at the domain boundaries are caused by charge accumulation. For such change in the energy bands, the defect levels at the domain boundaries play a decisive role.\",\"PeriodicalId\":22504,\"journal\":{\"name\":\"The Japan Society of Applied Physics\",\"volume\":\"50 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Japan Society of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7567/SSDM.2017.PS-13-21\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.2017.PS-13-21","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
First-principles study on domain boundary of MoS 2 : Origin of band bending
Using first-principles calculations based on density functional theory, electronic structure of domain boundary of MoS2 in which same polar edges are faced each other are investigated theoretically. We also find that the up-shift of energy bands at the domain boundaries are caused by charge accumulation. For such change in the energy bands, the defect levels at the domain boundaries play a decisive role.