机械应力对垂直堆叠NAND闪存结构中电池特性的影响

The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI:10.7567/ssdm.2017.ps-4-08

Y. Oh, T. Ono, Y. Song

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引用次数: 0

摘要

研究了垂直堆叠NAND快闪存储器中的应力分布及其对单元特性的影响。结果表明，接触孔的应力与钨共源线(CSL)缝隙的距离有关，对NAND电池特性的影响分别大于4%。因此，在考虑机械应力的情况下，通道孔接触位置会影响NAND电池的均匀性，在电池设计中应考虑到这一点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of Mechanical Stress to Cell Characteristics in Vertically Stacked NAND Flash Structure

The stress distribution and the impact of them to cell characteristics are investigated in vertically stacked NAND flash memory. It is revealed that the stress of contact hole depends on the distance from the tungsten common source line(CSL) slit, which changed the NAND cell characteristics more than 4% respectively. Therefore, position of channel hole contact affects the uniformity of the NAND cell taking into consideration the mechanical stress and should be considered in cell design.

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The Japan Society of Applied Physics

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