通过栅极-漏极和栅极-衬底电容测量分析mosfet中热载子引起的退化

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-01-01 DOI:10.1109/RELPHY.2000.843897

C.T. Hsu, M. Lau, Y. Yeow, Z. Yao

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引用次数: 4

摘要

在本文中，我们描述并演示了在低温下使用栅极-漏极电容(C/sub - gd/)测量作为表征热载子诱导电荷中心的工具。提出了一种基于栅极-衬底电容(C/sub gb/)的方法，并通过二维数值模拟验证了该方法的准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of hot-carrier-induced degradation in MOSFETs by gate-to-drain and gate-to-substrate capacitance measurements

In this paper we describe and demonstrate the use of gate-to-drain capacitance (C/sub gd/) measurements at cryogenic temperature as a tool to characterize hot-carrier-induced charge centers. Also a new method based on gate-to-substrate capacitance (C/sub gb/), validated by means of two-dimensional numerical simulation, is proposed to extract the spatial distribution of oxide interface charges with reasonable accuracy.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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