C. Brandt, C. Baur, A. Caon, P. Muller-Buschbaum, C. Zimmermann, T. Andreev
{"title":"高温对GaInP2/GaAs/Ge三结电池辐射损伤的影响","authors":"C. Brandt, C. Baur, A. Caon, P. Muller-Buschbaum, C. Zimmermann, T. Andreev","doi":"10.1109/pvsc-vol2.2013.6656726","DOIUrl":null,"url":null,"abstract":"We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"The influence of high temperatures on radiation damage of GaInP2/GaAs/Ge triple junction cells\",\"authors\":\"C. Brandt, C. Baur, A. Caon, P. Muller-Buschbaum, C. Zimmermann, T. Andreev\",\"doi\":\"10.1109/pvsc-vol2.2013.6656726\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.\",\"PeriodicalId\":6420,\"journal\":{\"name\":\"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/pvsc-vol2.2013.6656726\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/pvsc-vol2.2013.6656726","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of high temperatures on radiation damage of GaInP2/GaAs/Ge triple junction cells
We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.
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