包括多晶硅栅极耗尽在内的SiO/sub /氧化物薄膜的Fowler-Nordheim参数提取:用EEPROM存储单元验证

2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353) Pub Date : 2000-05-28 DOI:10.1109/ISCAS.2000.856359

N. Harabech, R. Bouchakour, P. Canet, P. Pannier, J. Sorbier

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引用次数: 13

摘要

EEPROM存储器特性的仿真是低功耗非易失性存储器产品设计和优化的基础。本文提出了一种提取薄(多晶硅栅)SiO/ sub2 /氧化物中Fowler-Nordheim参数的新方法。它包括从MOS电容特性中提取氧化物厚度，包括多晶硅栅损耗。然后，我们利用氧化物厚度来估计电场，提取FN电流参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extraction of Fowler-Nordheim parameters of thin SiO/sub 2/ oxide film including polysilicon gate depletion: validation with an EEPROM memory cell

The simulation of EEPROM memory characteristics is fundamental to the design and optimization of low-power non-volatile memory products. This paper presents a new method for extraction of Fowler-Nordheim parameters in a thin (polysilicon-gate) SiO/sub 2/ oxide. It consists of extraction of the oxide thickness from MOS capacitance characteristics including polysilicon-gate depletion. Then, we use the oxide thickness to estimate the electric field for the extraction of the FN current parameters.

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2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)

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