导电桥接RAM (CBRAM):一种新兴的可扩展到20nm以下的非易失性存储技术

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609463

M. Kund, Gerhard Beitel, C. Pinnow, Thomas Röhr, Jörg Schumann, R. Symanczyk, K. Ufert, Gerhard Müller

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引用次数: 263

摘要

我们报告了纳米级导电桥接记忆电池的电学特性，该电池由夹在可氧化阳极和惰性阴极之间的薄固态电解质层组成。低功耗的阻性开关操作，包括多层能力(MLC)在内的巨大可扩展性潜力以及所研究的可靠性方面，如高温保留，工作温度和耐用性，使CBRAM成为一种非常有前途的非易失性新兴存储技术

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm

We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state electrolyte layer sandwiched between an oxidizable anode and an inert cathode. Low power resistive switching operation, the large scalability potential including multi-level-capability (MLC) and the investigated reliability aspects, like retention at elevated temperature, operating temperature and endurance, make CBRAM a very promising non-volatile emerging memory technology

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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