2800万像素大面积全画幅CCD, 2/spl倍/2片上RGB充电,用于专业数码静止成像

C. Draijer, F. Polderdijk, A. van der Heide, B. Dillen, W. Klaassens, J. Bosiers
{"title":"2800万像素大面积全画幅CCD, 2/spl倍/2片上RGB充电,用于专业数码静止成像","authors":"C. Draijer, F. Polderdijk, A. van der Heide, B. Dillen, W. Klaassens, J. Bosiers","doi":"10.1109/IEDM.2005.1609478","DOIUrl":null,"url":null,"abstract":"CCD imagers for professional digital still cameras (DSCs) require in general high resolution. However for some applications, high sensitivity and high speed are more important and can be exchanged for resolution. A concept is presented in which the resolution of the imager will be decreased in binning mode while the sensitivity and frame rates are increased. For color CCDs, the RGB Bayer color filter pattern should be preserved after charge binning without discarding charge. The first results of this new concept are presented","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"7 1","pages":"4 pp.-810"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 28 mega pixel large area full frame CCD with 2/spl times/2 on-chip RGB charge-binning for professional digital still imaging\",\"authors\":\"C. Draijer, F. Polderdijk, A. van der Heide, B. Dillen, W. Klaassens, J. Bosiers\",\"doi\":\"10.1109/IEDM.2005.1609478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CCD imagers for professional digital still cameras (DSCs) require in general high resolution. However for some applications, high sensitivity and high speed are more important and can be exchanged for resolution. A concept is presented in which the resolution of the imager will be decreased in binning mode while the sensitivity and frame rates are increased. For color CCDs, the RGB Bayer color filter pattern should be preserved after charge binning without discarding charge. The first results of this new concept are presented\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"7 1\",\"pages\":\"4 pp.-810\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609478\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

用于专业数码相机(dsc)的CCD成像仪一般要求高分辨率。然而,对于某些应用,高灵敏度和高速度更重要,可以换取分辨率。提出了一种在分频模式下成像仪分辨率降低而灵敏度和帧速率提高的概念。对于彩色ccd,在电荷分装后应保留RGB拜耳滤色器图案,而不丢弃电荷。提出了这一新概念的初步结果
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 28 mega pixel large area full frame CCD with 2/spl times/2 on-chip RGB charge-binning for professional digital still imaging
CCD imagers for professional digital still cameras (DSCs) require in general high resolution. However for some applications, high sensitivity and high speed are more important and can be exchanged for resolution. A concept is presented in which the resolution of the imager will be decreased in binning mode while the sensitivity and frame rates are increased. For color CCDs, the RGB Bayer color filter pattern should be preserved after charge binning without discarding charge. The first results of this new concept are presented
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
High performance CMOSFET technology for 45nm generation and scalability of stress-induced mobility enhancement technique Light emitting silicon nanostructures A 65nm NOR flash technology with 0.042/spl mu/m/sup 2/ cell size for high performance multilevel application Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE) An intra-chip electro-optical channel based on CMOS single photon detectors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1