{"title":"电压控制自旋电子学存储器(VoCSM)具有高写入效率的潜力","authors":"M. Shimizu","doi":"10.7567/SSDM.2017.A-6-01","DOIUrl":null,"url":null,"abstract":"We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned spin-Hall structure, the cell has the critical switching current (Ic) of 200 μA at 20 nsec for an MTJ size of 50×150 nm 2 . The value is comparable to that for matured STT-MRAM with the similar dimension. By applying a voltage to the MTJ, Ic was modulated due to the voltage-controlled magnetic anisotropy (VCMA) effect and the Ic reduction was 50 μA at -0.8 V. It is concluded that using both the spin Hall effect and the VCMA effect, the VoCSM has a potential of high write-efficiency.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency\",\"authors\":\"M. Shimizu\",\"doi\":\"10.7567/SSDM.2017.A-6-01\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned spin-Hall structure, the cell has the critical switching current (Ic) of 200 μA at 20 nsec for an MTJ size of 50×150 nm 2 . The value is comparable to that for matured STT-MRAM with the similar dimension. By applying a voltage to the MTJ, Ic was modulated due to the voltage-controlled magnetic anisotropy (VCMA) effect and the Ic reduction was 50 μA at -0.8 V. It is concluded that using both the spin Hall effect and the VCMA effect, the VoCSM has a potential of high write-efficiency.\",\"PeriodicalId\":22504,\"journal\":{\"name\":\"The Japan Society of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Japan Society of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7567/SSDM.2017.A-6-01\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.2017.A-6-01","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency
We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned spin-Hall structure, the cell has the critical switching current (Ic) of 200 μA at 20 nsec for an MTJ size of 50×150 nm 2 . The value is comparable to that for matured STT-MRAM with the similar dimension. By applying a voltage to the MTJ, Ic was modulated due to the voltage-controlled magnetic anisotropy (VCMA) effect and the Ic reduction was 50 μA at -0.8 V. It is concluded that using both the spin Hall effect and the VCMA effect, the VoCSM has a potential of high write-efficiency.