一种pi栅超薄体无结多晶硅tft的制备与表征

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243302

Jia-Jiun Wu, Hung-Bin Chen, Ming-Hung Han, Yung-Chun Wu, Chun-Yen Chang

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引用次数: 0

摘要

成功地提出了一种利用亚10nm多晶硅通道制备超薄体无结tft的新方法。它不是光刻的额外掩模。本研究表明，采用一种新颖的方法可以降低制造流程的成本。UTB JLTFT在W/L=0.7um/1um时具有较低的阈值电压和陡峭的亚阈值斜率160 mV/dec。开/关电流比约为106，在高漏极电压下，跨导不会迅速降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication and characterization of a Pi-gate ultrathin body junctionless poly-Si TFTs

A novel method of fabricate ultrathin body (UTB) junctionless TFTs (JLTFT) with sub-10nm poly-Si channel has been successfully demonstrated. It is no additional mask for lithography. The cost of fabrication flow can be reduced by a novel method, that demonstrate at this work. UTB JLTFT has low threshold voltage and steep subthreshold slop 160 mV/dec at W/L=0.7um/1um. An ON/OFF current ratio is about 106, and transconductance does not decrease rapidly at a high drain voltage.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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