14nm三栅极CMOS中4fJ/bit延迟硬化物理不可克隆电路

S. Mathew, Sudhir K. Satpathy, Vikram B. Suresh, M. Anders, Himanshu Kaul, A. Agarwal, S. Hsu, Gregory K. Chen, R. Krishnamurthy, V. De
{"title":"14nm三栅极CMOS中4fJ/bit延迟硬化物理不可克隆电路","authors":"S. Mathew, Sudhir K. Satpathy, Vikram B. Suresh, M. Anders, Himanshu Kaul, A. Agarwal, S. Hsu, Gregory K. Chen, R. Krishnamurthy, V. De","doi":"10.1109/VLSIC.2016.7573554","DOIUrl":null,"url":null,"abstract":"A 1024-bit delay-hardened physically unclonable function (PUF) array is fabricated in 14nm tri-gate CMOS, targeted for on-die secure generation of a full-entropy 128bit key. Differential clock delay injection, selective destabilization of unstable bits and temporal-majority-voting (TMV) based winnowing enable 1.7× higher post-burn-in BER improvement, 50% reduction in dark-bit induced bit-errors and worst-case BER of 1.46%. Spectral analysis of unstable PUF bits show significant 1/f noise impacts below 500MHz. In-situ field aging with write feedback improves bit stability by up to 48%.","PeriodicalId":6512,"journal":{"name":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","volume":"20 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 4fJ/bit delay-hardened physically unclonable function circuit with selective bit destabilization in 14nm tri-gate CMOS\",\"authors\":\"S. Mathew, Sudhir K. Satpathy, Vikram B. Suresh, M. Anders, Himanshu Kaul, A. Agarwal, S. Hsu, Gregory K. Chen, R. Krishnamurthy, V. De\",\"doi\":\"10.1109/VLSIC.2016.7573554\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1024-bit delay-hardened physically unclonable function (PUF) array is fabricated in 14nm tri-gate CMOS, targeted for on-die secure generation of a full-entropy 128bit key. Differential clock delay injection, selective destabilization of unstable bits and temporal-majority-voting (TMV) based winnowing enable 1.7× higher post-burn-in BER improvement, 50% reduction in dark-bit induced bit-errors and worst-case BER of 1.46%. Spectral analysis of unstable PUF bits show significant 1/f noise impacts below 500MHz. In-situ field aging with write feedback improves bit stability by up to 48%.\",\"PeriodicalId\":6512,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)\",\"volume\":\"20 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2016.7573554\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2016.7573554","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

采用14nm三栅极CMOS制造了一个1024位延迟硬化物理不可克隆功能(PUF)阵列,目标是在片上安全生成全熵128位密钥。差分时钟延迟注入、不稳定比特的选择性不稳定和基于时间多数投票(TMV)的窗口化使刻录后误码率提高1.7倍,黑比特引起的误码率降低50%,最坏情况误码率为1.46%。不稳定PUF比特的频谱分析显示在500MHz以下有显著的1/f噪声影响。采用写反馈的现场老化技术可将钻头稳定性提高48%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 4fJ/bit delay-hardened physically unclonable function circuit with selective bit destabilization in 14nm tri-gate CMOS
A 1024-bit delay-hardened physically unclonable function (PUF) array is fabricated in 14nm tri-gate CMOS, targeted for on-die secure generation of a full-entropy 128bit key. Differential clock delay injection, selective destabilization of unstable bits and temporal-majority-voting (TMV) based winnowing enable 1.7× higher post-burn-in BER improvement, 50% reduction in dark-bit induced bit-errors and worst-case BER of 1.46%. Spectral analysis of unstable PUF bits show significant 1/f noise impacts below 500MHz. In-situ field aging with write feedback improves bit stability by up to 48%.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A chopping switched-capacitor RF receiver with integrated blocker detection, +31dBm OB-IIP3, and +15dBm OB-B1dB A wireless power transfer system with enhanced response and efficiency by fully-integrated fast-tracking wireless constant-idle-time control for implants Adaptive clocking with dynamic power gating for mitigating energy efficiency & performance impacts of fast voltage droop in a 22nm graphics execution core A high-density CMOS multi-modality joint sensor/stimulator array with 1024 pixels for holistic real-time cellular characterization A microelectrode array with 8,640 electrodes enabling simultaneous full-frame readout at 6.5 kfps and 112-channel switch-matrix readout at 20 kS/s
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1