利用李斯特菌Dps形成具有高密度纳米点阵列的纳米点型浮栅存储器

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243352

H. Kamitake, K. Ohara, M. Uenuma, B. Zheng, Y. Ishikawa, I. Yamashita, Y. Uraoka

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引用次数: 0

摘要

利用li -binding Dps (TD)形成高密度二维纳米点阵列，该Dps是李斯特菌具有ti结合肽的Dps。在低温条件下，通过对TD的吸附，在SiO2上形成了1012 cm-2以上的高密度纳米点阵列。利用TD制成纳米点阵列的MOS电容器的磁滞比利用铁蛋白制成的MOS电容器的磁滞大。本研究有助于未来记忆装置的实现。

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Nanodot-type floating gate memory with high-density nanodot array formed utilizing Listeria Dps

We formed a high-density two-dimensional nanodot array by utilizing Ti-binding Dps (TD) which is a Listeria Dps with Ti-binding peptides. A high-density nanodot array over 1012 cm-2 was formed on a SiO2 at low temperature by specific adsorption of TD. The hysteresis of the MOS capacitor with nanodot array formed utilizing TD was larger than that of the MOS capacitor fabricated utilizing ferritin. This research contributes to realizing future memory devices.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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