采用Zr添加Ta/sub x/ C/sub y/栅极对HfO/sub 2/进行微观改性，提高了器件性能和可靠性

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609259

R. Hegde, D. Triyoso, P. Tobin, S. Kalpat, M. Ramón, H. Tseng, J. Schaeffer, E. Luckowski, W. Taylor, C. Capasso, D. Gilmer, M. Moosa, A. Haggag, M. Raymond, D. Roan, J. Nguyen, L. La, E. Hebert, R. Cotton, X. Wang, S. Zollner, R. Gregory, D. Werho, R. Rai, L. Fonseca, M. Stoker, C. Tracy, B.W. Chan, Y. Chiu, B. White

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引用次数: 12

摘要

本文首次报道了一种具有TaxCy金属栅极的新型锆酸铪(HfZrOx)栅极介质的研制。与HfO2相比，新型HfZrOx栅极介质表现出:(1)更高的跨导性，(2)更少的电荷捕获，(3)更高的驱动电流，(4)更低的NMOS Vt，(5)更低的C-V滞后，(6)更低的界面态密度，(7)更好的片级厚度均匀性，(8)更长的PBTI寿命。我们将这些改进归因于向HfO2中添加Zr修饰的微观结构

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability

For the first time we report on the development of a novel hafnium zirconate (HfZrO_x) gate dielectric with a Ta_xC_y metal gate. Compared to HfO₂, the new HfZrO_x gate dielectric showed: (1) higher transconductance, (2) less charge trapping, (3) higher drive current, (4) lower NMOS V_t, (5) reduced C-V hysteresis, (6) lower interface state density, (7) superior wafer-level thickness uniformity, and (8) longer PBTI lifetime. We attribute these improvements to a microstructure that is modified by addition of Zr to HfO₂

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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