高能效无比较器电流模式TFET-CMOS协集成可扩展闪存ADC

N. Gupta, H. Shrimali, A. Makosiej, A. Vladimirescu, A. Amara
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引用次数: 1

摘要

提出了一种新型的TFET-CMOS协集成无比较器、高能效的ADC结构。该设计利用tfet的负差分电阻特性来生成温度计代码,而无需使用比较器。该设计支持动态电压频率缩放。二元加权ttfet器件尺寸用于生成温度计代码。在这项工作中使用的tfet与28nm FDSOI-CMOS工艺兼容。3位至10位ADC架构最相关的性能数字包括:3位ADC的运行速度为68 MHz, ENOB评估值大于2.38;对于3位至10位设计,电源电压分别为0.4V至1.2V, FOM在0.07至1.3 fJ/转换范围内。提出的5位和6位设计在FOM方面分别提高了46倍[1]和265倍[2]。
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Energy Efficient Comparator-Less Current-Mode TFET-CMOS Co-Integrated Scalable Flash ADC
This paper presents a novel TFET-CMOS co-integrated comparator-less, energy-efficient ADC architecture. The design utilizes the Negative Differential Resistance property of TFETs to generate thermometer code without using comparators. The design supports Dynamic Voltage Frequency Scaling. Binary-weighted TFET device sizing is used to generate thermometer code. TFETs used in this work are compatible with a 28nm FDSOI-CMOS process for fabrication. The most relevant performance numbers for 3- to 10-bit ADC architectures include speed of operation of 68 MHz with an ENOB evaluated greater than 2.38 for the 3-bit ADC; the FOM is in the range of 0.07 to 1.3 fJ/conversion for 3- to 10-bit designs with supply voltages from 0.4V to 1.2V, respectively. The proposed 5- and 6-bit designs show 46x [1] and 265x [2] improvement in FOM, respectively.
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