{"title":"一种新颖的双端口6T CMOS SRAM单元结构，用于具有单比特线同时读写访问(SBLSRWA)能力的低压VLSI SRAM","authors":"Bo-Ting Wang, J. B. Kuo","doi":"10.1109/ISCAS.2000.857606","DOIUrl":null,"url":null,"abstract":"This paper reports a two-port 6T CMOS SRAM cell structure for low-voltage VLSI SRAM with single-bit-line simultaneous read-and-write access (SBLSRWA) capability. With a unique structure connecting the source terminal of an NMOS device in the SRAM cell to the write word line, this SRAM cell can be used to provide SBLSRWA capability for 1V two-port VLSI SRAM as verified by SPICE results.","PeriodicalId":6422,"journal":{"name":"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A novel two-port 6T CMOS SRAM cell structure for low-voltage VLSI SRAM with single-bit-line simultaneous read-and-write access (SBLSRWA) capability\",\"authors\":\"Bo-Ting Wang, J. B. Kuo\",\"doi\":\"10.1109/ISCAS.2000.857606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports a two-port 6T CMOS SRAM cell structure for low-voltage VLSI SRAM with single-bit-line simultaneous read-and-write access (SBLSRWA) capability. With a unique structure connecting the source terminal of an NMOS device in the SRAM cell to the write word line, this SRAM cell can be used to provide SBLSRWA capability for 1V two-port VLSI SRAM as verified by SPICE results.\",\"PeriodicalId\":6422,\"journal\":{\"name\":\"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.2000.857606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2000.857606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel two-port 6T CMOS SRAM cell structure for low-voltage VLSI SRAM with single-bit-line simultaneous read-and-write access (SBLSRWA) capability
This paper reports a two-port 6T CMOS SRAM cell structure for low-voltage VLSI SRAM with single-bit-line simultaneous read-and-write access (SBLSRWA) capability. With a unique structure connecting the source terminal of an NMOS device in the SRAM cell to the write word line, this SRAM cell can be used to provide SBLSRWA capability for 1V two-port VLSI SRAM as verified by SPICE results.
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