{"title":"基于双极压电晶体管的压力传感器敏感元件建模","authors":"Mikhail Basov, D. Prigodskiy","doi":"10.21203/RS.3.RS-677127/V1","DOIUrl":null,"url":null,"abstract":"\n The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis of the developed mathematical model for a pressure sensor with traditional piezoresistive Wheatstone bridge and theoretical conclusions regarding the change in the electrical parameters of a bipolar transistor under the influence of deformation was carried out.","PeriodicalId":23650,"journal":{"name":"viXra","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Modeling of sensitive element for pressure sensor based on bipolar piezotransistor\",\"authors\":\"Mikhail Basov, D. Prigodskiy\",\"doi\":\"10.21203/RS.3.RS-677127/V1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis of the developed mathematical model for a pressure sensor with traditional piezoresistive Wheatstone bridge and theoretical conclusions regarding the change in the electrical parameters of a bipolar transistor under the influence of deformation was carried out.\",\"PeriodicalId\":23650,\"journal\":{\"name\":\"viXra\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"viXra\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21203/RS.3.RS-677127/V1\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"viXra","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21203/RS.3.RS-677127/V1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of sensitive element for pressure sensor based on bipolar piezotransistor
The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis of the developed mathematical model for a pressure sensor with traditional piezoresistive Wheatstone bridge and theoretical conclusions regarding the change in the electrical parameters of a bipolar transistor under the influence of deformation was carried out.
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