高功率，高AlGaN/ gan - hemt具有新颖的电源棒设计

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609413

R. Lossy, A. Liero, J. Wurfl, G. Trankle

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引用次数: 1

摘要

用于高功率微波应用的氮化镓晶体管由于晶体管手指尺寸的扩大而受到功率损失的限制。提出了一种新的栅极电源设计，与传统晶体管设计相比，它具有更高的功率增益。使用该技术，在2GHz频率下输出28瓦的封装功率器件可测量到20 dB的线性增益

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High power, high AlGaN/GaN-HEMTs with novel powerbar design

Gallium nitride transistors for high power microwave application are often limited by power loss due to extended transistor finger size. A new design for the gate supply is presented which allows for higher power gain compared to conventional transistor designs. Using this technique a linear gain of 20 dB is measured for a packaged power device delivering 28 Watt at 2GHz

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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